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IRG 2  Intellectual Focus:

The continued reduction of size in devices brings revolution in the recent technology due to the novel physical properties observed in nanomaterials and it stimulated the researchers to find an alternative to microelectronics i.e. to render the individual components to be multifunctional. Several long-term concepts are being investigated that would reduce the device size, power consumption, and exploit multifunctional properties of materials for their integration in electronic devices. In this project, we focus on four areas, namely high k gate oxides, resistive switching memories, magnetoelectric multiferroic, and spintronics materials.

 LaGdO3 MOSFET

IFN Faculty Participants: R. Katiyar (IRG2 Leader), Y. Ishikawa, J. Velev, A. Kumar, R. Palai, R. Thomas, M. Guinel, J.F. Scott (UPR, Rio Piedras);     J. Lu, M. Tomar, O. Perales (UPR, Mayaguez); L. Rosa (UPR, Humacao); W. Otano (UPR, Cayey)

 

Collaborations with Strategic Partners: O. Auciello, S. Hong (Argonne National Laboratory); A. Rastogi (Binghamton University);  J.F. Scott, (Cambridge University, U.K.); Andrey Sokolov and Christian Bineck, Peter Dowben (Nebraska University, Lincoln, NE), Marti Gregg (Queen's University Belfast-Ireland), Evgeny Tsymbal at the University of Nebraska

 

Other Partner Collaborators: J. Santiago and D. Bonnell (University of Pennsylvania, Philadelphia); Yan Xin (National High Magnetic Laboratory, Tallahassee), Yury Yuzyuk (Southern Federal University, Russia), T.S. Kalkur (Colorado State University, Colorado Springs)

 

High-k for DRAM capacitors TAOThe experiments related to testbeds developments and their characterizations for Logic and Memory Devices were mainly carried out in collaboration with ANL wich include Synthesis of novel TiOx/Al2O3 nanolaminates that exhibit giant dielectric constant, and understanding the fundamental physics underlying the dielectric behavior, and in integrating these nanolaminates into supercapacitor structures to enable a new generation of micro and nano-devices, such as DRAMs, nanoscale CMOS devices, energy storage systems and implantable microchips for a new generation of biomedical devices and Synthesis of promising multiferroic thin films and integration into micro and nano-structures for fabrication of testbed devices and their integration with Si technology. 

More than half of our theoretical work is in collaboration with the group of Evgeny Tsymbal at the University of Nebraska through our joint Cyberinfrastructure award. Under the auspices of the Cyberinfrastructure grant a large number of exchanges of undergraduates, graduate students, and postdocs, as well as faculty visits were organized between the University of Puerto Rico and the University of Nebraska. In particular, Pavel Lukashev, a postdoc of Evgeny Tsymbal, visited Puerto Rico for several weeks and two publications resulted from this collaboration. In addition, the Cyberinfrastructure external advisory board meeting was held in San Juan, during which many collaborators visited from the University of Nebraska.